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PMEM1505NG
NPN transistor/Schottky rectifier module
Rev. 02 -- 31 August 2009 Product data sheet
1. Product profile
1.1 General description
Combination of an NPN transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT353 (SC-88A) small plastic package. PNP complement: PMEM1505PG
1.2 Features
I I I I I I 300 mW total power dissipation Current capability up to 0.5 A Reduces printed-circuit board area required Reduces pick and place costs Small plastic SMD package Transistor N Low collector-emitter saturation voltage. I Diode N Ultra high-speed switching N Very low forward voltage N Guard ring protected
1.3 Applications
I DC-to-DC converters I General purpose load drivers I MOSFET drivers I Inductive load drivers I Reverse polarity protection circuits
1.4 Quick reference data
Table 1. Symbol VCEO IC VR IF
[1]
Quick reference data Parameter collector-emitter voltage collector current (DC) continuous reverse voltage continuous forward current Conditions open base continuous
[1]
Min -
Typ -
Max 15 0.5 20 0.5
Unit V A V A
NPN transistor
Schottky barrier rectifier
Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353.
NXP Semiconductors
PMEM1505NG
NPN transistor/Schottky rectifier module
2. Pinning information
Table 2. Pin 1 5 4 2 3 Discrete pinning Description anode cathode collector base emitter
1 2 3 4
sym023
Simplified outline
5 4
Symbol
3 2 1
5
3. Ordering information
Table 3. Ordering information Package Name PMEM1505NG Description plastic surface mounted package; 5 leads Version SOT353 Type number
4. Marking
Table 4. Marking Marking code[1] L7* Type number PMEM1505NG
[1] * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) Conditions open emitter open base open collector continuous continuous continuous; Ts 55 C ICM IBM peak collector current peak base current
[1] [2] [3]
Min -
Max 15 15 6 0.5 0.6 1 1 100
Unit V V V A A A A mA
NPN transistor
PMEM1505NG_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 31 August 2009
2 of 11
NXP Semiconductors
PMEM1505NG
NPN transistor/Schottky rectifier module
Table 5. Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter total power dissipation Conditions Tamb 25 C Tamb 25 C Ts 55 C Tj VR IF IFSM Ptot junction temperature continuous reverse voltage continuous forward current non-repetitive peak forward current total power dissipation t = 8.3 ms; square wave Tamb 25 C Tamb 25 C Ts 55 C Tj Ptot Tstg Tamb junction temperature total power dissipation storage temperature operating ambient temperature
[2] [1] [2] [3] [2] [1] [2] [3]
Min -65 -65
Max 200 250 800 150 20 0.5 5 100 200 800 125 300 +150 +125
Unit mW mW mW C V A A mW mW mW C mW C C
Schottky barrier rectifier
Combined device Tamb 25 C
[2]
[1] [2] [3]
Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353. Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm2 mounting pad for both collector and cathode. Solder point of collector or cathode tab.
6. Thermal characteristics
Table 6. Symbol Rth(j-s) Rth(j-a) Thermal characteristics[1] Parameter thermal resistance from junction to solder point thermal resistance from junction to ambient Conditions in free air in free air
[2]
Typ 120 395 495 410
Unit K/W K/W K/W K/W
Single device
[3] [4]
Combined device Rth(j-a)
[1]
thermal resistance from junction to ambient
in free air
[5]
For Schottky barrier rectifiers thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request. Solder point of collector or cathode tab. Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm2 mounting pad for both collector and cathode. Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353. Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.
(c) NXP B.V. 2009. All rights reserved.
[2] [3] [4] [5]
PMEM1505NG_2
Product data sheet
Rev. 02 -- 31 August 2009
3 of 11
NXP Semiconductors
PMEM1505NG
NPN transistor/Schottky rectifier module
7. Characteristics
Table 7. Characteristics Tamb = 25 C unless otherwise specified Symbol ICBO Parameter collector-base cut-off current emitter-base cut-off current DC current gain Conditions VCB = 15 V; IE = 0 A VCB = 15 V; IE = 0 A; Tj = 150 C VEB = 5 V; IC = 0 A VCE = 2 V; IC = 10 mA VCE = 2 V; IC = 100 mA VCE = 2 V; IC = 500 mA VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 200 mA; IB = 10 mA IC = 500 mA; IB = 50 mA RCEsat VBEsat VBEon fT Cc equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = 500 mA; IB = 50 mA IC = 500 mA; IB = 50 mA VCE = 2 V; IC = 100 mA VCE = 5 V; IC = 100 mA; f = 100 MHz VCB = 10 V; IE = Ie = 0 A; f = 1 MHz see Figure 1 IF = 10 mA IF = 100 mA IF = 500 mA IF = 1000 mA IR reverse current see Figure 2 VR = 5 V VR = 8 V VR = 15 V Cd diode capacitance
Pulse test: tp 300 s; 0.02
[1] [1] [1] [1] [1] [1] [1] [1]
Min 200 150 90 250 -
Typ 300 420 4.4
Max 100 50 100 25 150 250 < 500 1.1 0.9 6
Unit nA A nA
NPN transistor
IEBO hFE
mV mV mV m V V MHz pF
[1]
[1]
Schottky barrier rectifier VF continuous forward voltage 240 300 400 480 5 7 10 19 270 350 460 550 10 20 50 25 mV mV mV mV A A A pF
VR = 5 V; f = 1 MHz; see Figure 3
[1]
PMEM1505NG_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 31 August 2009
4 of 11
NXP Semiconductors
PMEM1505NG
NPN transistor/Schottky rectifier module
103 IF (mA)
(1) (2) (3)
001aaa479
105 IR (A) 104
(1)
001aaa480
102 103
(2)
102 10 10
(3)
1 0 0.1 0.2 0.3 0.4 VF (V) 0.5
1 0 5 10 15 20 VR (V) 25
Schottky barrier rectifier (1) Tamb = 125 C (2) Tamb = 85 C (3) Tamb = 25 C
Schottky barrier rectifier (1) Tamb = 125 C (2) Tamb = 85 C (3) Tamb = 25 C
Fig 1.
Forward current as a function of forward voltage; typical values
80
001aaa481
Fig 2.
Reverse current as a function of reverse voltage; typical values
001aaa482
600 hFE
(1)
Cd (pF) 60
400
(2)
40
200 20
(3)
0 0 5 10 15 VR (V) 20
0 10-1
1
10
102 IC (mA)
103
Schottky barrier rectifier; f = 1 MHz; Tamb = 25 C
NPN transistor; VCE = 2 V (1) Tamb = 150 C (2) Tamb = 25 C (3) Tamb = -55 C
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
Fig 4.
DC current gain as a function of collector current; typical values
PMEM1505NG_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 31 August 2009
5 of 11
NXP Semiconductors
PMEM1505NG
NPN transistor/Schottky rectifier module
1.1 VBE (V) 0.9
(1)
001aaa483
103 VCEsat (mV) 102
001aaa484
(1)
0.7
(2)
0.5
(3)
(2)
10
(3)
0.3
0.1 10-1
1
10
102 IC (mA)
103
1 10-1
1
10
102 IC (mA)
103
NPN transistor; VCE = 2 V (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 150 C
NPN transistor; IC/IB = 20 (1) Tamb = 150 C (2) Tamb = 25 C (3) Tamb = -55 C
Fig 5.
Base-emitter voltage as a function of collector current; typical values
102 RCEsat () 10
Fig 6.
Collector-emitter saturation voltage as a function of collector current; typical values
001aaa485
(2) (1)
1
(3)
10-1 10-1
1
10
102 IC (mA)
103
NPN transistor; IC/IB = 20 (1) Tamb = 150 C (2) Tamb = 25 C (3) Tamb = -55 C
Fig 7.
Equivalent on-resistance as a function of collector current; typical values
PMEM1505NG_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 31 August 2009
6 of 11
NXP Semiconductors
PMEM1505NG
NPN transistor/Schottky rectifier module
8. Application information
VCC
VIN
VOUT
CONTROLLER Rload
IN
mle231
mdb577
Fig 8.
DC-to-DC converter
Fig 9.
Inductive load driver (relays, motors and buzzers) with free-wheeling diode
PMEM1505NG_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 31 August 2009
7 of 11
NXP Semiconductors
PMEM1505NG
NPN transistor/Schottky rectifier module
9. Package outline
Plastic surface-mounted package; 5 leads SOT353
D
B
E
A
X
y
HE
vMA
5
4
Q
A
A1
1
e1 e
2
bp
3
wM B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.3 0.2 c 0.25 0.10 D 2.2 1.8 E (2) 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT353
REFERENCES IEC JEDEC JEITA SC-88A
EUROPEAN PROJECTION
ISSUE DATE 04-11-16 06-03-16
Fig 10. Package outline
PMEM1505NG_2 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 31 August 2009
8 of 11
NXP Semiconductors
PMEM1505NG
NPN transistor/Schottky rectifier module
10. Revision history
Table 8. Revision history Release date 20090831 Data sheet status Product data Change notice Supersedes PMEM1505NG_1 Document ID PMEM1505NG_2 Modifications:
* * *
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. Table 2 "Discrete pinning": amended Figure 10 "Package outline":updated Product data -
PMEM1505NG_1
20040525
PMEM1505NG_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 31 August 2009
9 of 11
NXP Semiconductors
PMEM1505NG
NPN transistor/Schottky rectifier module
11. Legal information
11.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
11.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PMEM1505NG_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 31 August 2009
10 of 11
NXP Semiconductors
PMEM1505NG
NPN transistor/Schottky rectifier module
13. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 31 August 2009 Document identifier: PMEM1505NG_2

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